Print Page
BPW77NB
Phototransistor, 850 nm, 10 °, 250 mW, 3 Pins, TO-18
Image is for illustrative purposes only. Please refer to product description.
657 In Stock
Need more?
UK Stock
Order before 3pm standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$3.819 |
| 10+ | US$2.693 |
| 25+ | US$2.546 |
| 50+ | US$2.412 |
| 100+ | US$2.265 |
| 500+ | US$2.010 |
Price for:Each
Minimum: 1
Multiple: 1
US$3.82 (ex VAT)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
The BPW77NB is a Silicon NPN Phototransistor with high radiant sensitivity, base terminal and glass lens. It is sensitive to visible and near infrared radiation.
- 4.7mm Dimension
- High photo sensitivity
- High radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response times
- Base terminal connected
Applications
Industrial, Sensing & Instrumentation, Motor Drive & Control
Technical Specifications
Wavelength Typ
850nm
Power Consumption
250mW
Transistor Case Style
TO-18
Automotive Qualification Standard
-
Viewing Angle
10°
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454
Product traceability