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BPW96B
Phototransistor, 850 nm, 20 °, 150 mW, 2 Pins, T-1 3/4 (5mm)
Image is for illustrative purposes only. Please refer to product description.
4,569 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$1.045 |
| 10+ | US$0.682 |
| 25+ | US$0.632 |
| 50+ | US$0.583 |
| 100+ | US$0.533 |
| 500+ | US$0.453 |
Price for:Each
Minimum: 1
Multiple: 1
US$1.04 (ex VAT)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
The BPW96B is a clear Silicon NPN Phototransistor with high radiant sensitivity. It is sensitive to visible and near infrared radiation and suitable for visible and near infrared radiation.
- Leads with stand-off
- High photo sensitivity
- High radiant sensitivity
- Fast response times
- ±20° Angle of half sensitivity
Applications
Sensing & Instrumentation
Technical Specifications
Wavelength Typ
850nm
Power Consumption
150mW
Transistor Case Style
T-1 3/4 (5mm)
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
20°
No. of Pins
2Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454
Product traceability