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FF6MR12KM1PHOSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 250 A, 1.2 kV, 0.00581 ohm, Module
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoFF6MR12KM1PHOSA1
Order Code3516931
Product RangeCoolSiC C
Also Known AsFF6MR12KM1P, SP002485310
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id250A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.00581ohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.5V
Power Dissipation-
Operating Temperature Max150°C
Product RangeCoolSiC C
SVHCNo SVHC (27-Jun-2018)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
250A
Drain Source On State Resistance
0.00581ohm
No. of Pins
-
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2018)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
CoolSiC C
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Hungary
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Hungary
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01
Product traceability