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IPB64N25S320ATMA1
Power MOSFET, N Channel, 250 V, 64 A, 0.0175 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB64N25S320ATMA1
Order Code4319085
Product RangeOptiMOS T Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 1000+ | US$3.323 |
| 3000+ | US$3.189 |
Price for:Each (Supplied on Full Reel)
Minimum: 1000
Multiple: 1000
US$3,323.00 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB64N25S320ATMA1
Order Code4319085
Product RangeOptiMOS T Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id64A
Drain Source On State Resistance0.0175ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS T Series
QualificationAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Product Overview
IPB64N25S320ATMA1 is a OptiMOS®-T power-transistor. Potential application includes hybrid inverter, DC/DC, piezo injection.
- N-channel - enhancement mode, AEC qualified, robust packages with superior quality and reliability
- 100% Avalanche tested, optimized total gate charge enables smaller driver output stages
- Drain-source breakdown voltage is 250V min (VGS=0V, ID= 1mA, Tj = 25°C)
- Drain-source on-state resistance is 20mohm max (VGS=10V, ID=64A, Tj = 25°C)
- Continuous drain current is 64A max (TC=25°C, VGS = 10V), power dissipation is 300W
- Gate threshold voltage range from 2.0 to 4.0V (VDS=V GS, ID=270µA, Tj = 25°C)
- Low switching and conduction power losses for high thermal efficiency
- Rise time is 20ns typ (VDD=100V, VGS=10V, ID=25A, RG=1.6ohm, Tj = 25°C)
- Fall time is 12ns typ (VDD=100V, VGS=10V, ID=25A, RG=1.6ohm, Tj = 25°C)
- PG-TO263-3-2 package, operating temperature range from -55 to +175°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
64A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.0175ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
OptiMOS T Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability