MT29F2G08ABAEAWP:E
Flash Memory, SLC NAND, 2 Gbit, 256M x 8bit, Parallel, TSOP-I, 48 Pins
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$2.653 |
| 10+ | US$2.466 |
| 25+ | US$2.399 |
| 50+ | US$2.345 |
| 100+ | US$2.278 |
| 250+ | US$2.211 |
| 500+ | US$2.171 |
| 1000+ | US$2.131 |
Product Information
Product Overview
MT29F2G08ABAEAWP:E is a NAND flash memory. This NAND flash device includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash dies. A NAND flash die is the minimum unit that can independently execute commands and report status. This device has an internal 4-bit ECC that can be enabled using the GET/SET features.
- Open NAND flash interface (ONFI) 1.0-compliant
- Single-level cell (SLC) technology
- Command set: ONFI NAND flash protocol
- Operation status byte provides software method for detecting: operation completion
- Pass/fail condition, write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- RESET (FFh) required as first command after power-on
- Alternate method of device initialization (Nand-Init) after power up (contact factory)
- 3.3V (2.7 to 3.6V) operating voltage range
- 48-pin TSOP package, 0°C to +70°C commercial operating temperature range
Technical Specifications
SLC NAND
256M x 8bit
TSOP-I
-
2.7V
3.3V
0°C
3.3V Parallel NAND Flash Memories
No SVHC (17-Dec-2015)
2Gbit
Parallel
48Pins
16ns
3.6V
Surface Mount
70°C
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Singapore
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate