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2N7002F
Power MOSFET, N Channel, 60 V, 475 mA, 0.78 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part No2N7002F
Order Code1894722RL
Drain Source Voltage Vds60V
Continuous Drain Current Id475mA
Drain Source On State Resistance0.78ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation830mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
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Product Overview
The 2N7002F is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
- Very Fast Switching
- Logic Level Threshold Compatible
Applications
Audio, Signal Processing, Power Management, Communications & Networking, Consumer Electronics, Industrial
Technical Specifications
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.78ohm
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
Continuous Drain Current Id
475mA
Rds(on) Test Voltage
10V
Power Dissipation
830mW
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008