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FDC642P

Name: Power MOSFET, P Channel, 20 V, 4 A, 0.045 ohm, SOT-23, Surface Mount
Brand: ONSEMI
SKU: 2453845RL
Availability: InStock

Power MOSFET, P Channel, 20 V, 4 A, 0.045 ohm, SOT-23, Surface Mount

Date/Lot Code

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ManufacturerONSEMI

Manufacturer Part NoFDC642P

Order Code2453845RL

Technical Datasheet

Data Sheet

See all Technical Docs

Packaging Options

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Re-Reel

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Quantity	Price (ex VAT)
100+	US$0.369
500+	US$0.283
1000+	US$0.235
5000+	US$0.190

Price for:Each (Supplied on Cut Tape)

Minimum: 100

Multiple: 5

US$41.90 (ex VAT)

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Product Information

ManufacturerONSEMI

Manufacturer Part NoFDC642P

Order Code2453845RL

Technical Datasheet

Data Sheet

Transistor PolarityP Channel

Channel TypeP Channel

Drain Source Voltage Vds20V

Continuous Drain Current Id4A

Drain Source On State Resistance0.045ohm

On Resistance Rds(on)0.045ohm

Transistor Case StyleSOT-23

Transistor MountingSurface Mount

Rds(on) Test Voltage4.5V

Gate Source Threshold Voltage Max600mV

Power Dissipation1.6W

Power Dissipation Pd1.6W

No. of Pins6Pins

Operating Temperature Max150°C

Product Range-

Qualification-

Automotive Qualification Standard-

MSLMSL 1 - Unlimited

SVHCNo SVHC (27-Jun-2024)

Product Overview

The FDC642P is a 2.5V specified single P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. It is suitable for use in load switch and battery protection application.

Fast switching speed
High performance Trench technology for extremely low RDS (ON)
11nC typical low gate charge

Notes

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Technical Specifications

Transistor Polarity

P Channel

Drain Source Voltage Vds

20V

Drain Source On State Resistance

0.045ohm

Transistor Case Style

SOT-23

Rds(on) Test Voltage

4.5V

Power Dissipation

1.6W

No. of Pins

6Pins

Product Range

Automotive Qualification Standard

SVHC

No SVHC (27-Jun-2024)

Channel Type

P Channel

Continuous Drain Current Id

On Resistance Rds(on)

0.045ohm

Transistor Mounting

Surface Mount

Gate Source Threshold Voltage Max

600mV

Power Dissipation Pd

1.6W

Operating Temperature Max

150°C

Qualification

MSL

MSL 1 - Unlimited

Technical Docs (2)

Technical Data Sheet EN

Product Change Notice EN

Alternatives for FDC642P

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Legislation and Environmental

Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out

Tariff No:85412900

US ECCN:EAR99

EU ECCN:NLR

RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes

RoHS

SVHC:No SVHC (27-Jun-2024)

Download Product Compliance Certificate

Product Compliance Certificate

Weight (kg):.000036

Product traceability