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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD5353
Order Code2322583
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0101ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.8V
Power Dissipation69W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (27-Jun-2024)
Product Overview
The FDD5353 is a N-channel MOSFET produced advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- 100% UIL tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
69W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0101ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000357
Product traceability