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FDI038AN06A0
Power MOSFET, N Channel, 60 V, 80 A, 3500 µohm, I2PAK, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDI038AN06A0
Order Code3616049
Product RangePower Trench
Technical Datasheet
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDI038AN06A0
Order Code3616049
Product RangePower Trench
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id80A
Drain Source On State Resistance3500µohm
Transistor Case StyleI2PAK
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangePower Trench
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
I2PAK
Rds(on) Test Voltage
10V
Power Dissipation
310W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
3500µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
Power Trench
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability