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STP40N60M2
Power MOSFET, N Channel, 600 V, 34 A, 0.088 ohm, TO-220, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP40N60M2
Order Code2807298
Product RangeMDmesh M2
Technical Datasheet
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$6.593 |
| 5+ | US$5.976 |
| 10+ | US$5.373 |
| 50+ | US$4.757 |
| 100+ | US$4.154 |
| 250+ | US$3.538 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP40N60M2
Order Code2807298
Product RangeMDmesh M2
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id34A
Drain Source On State Resistance0.088ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh M2
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
STP40N60M2 is a N-channel 600V, 0.078ohm typ., 34A MDmesh M2 Power MOSFET. This device is N-channel Power MOSFET developed using MDmesh™ M2 technology. Due to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Application includes switching applications, LLC converters, resonant converters.
- Extremely low gate charge, excellent output capacitance (Cos) profile
- 100% avalanche tested, zener-protected
- 650V VDS at Tjmax, 0.088ohm maximum static drain-source on-resistance (VGS = 10V, ID = 17A)
- 34A typical source-drain current (TC = 25°C)
- 600V minimum drain-source breakdown voltage (VGS = 0, ID = 1mA)
- 3V typical gate threshold voltage (VDS = VGS, ID = 250µA)
- 10nC typical gate-source charge (VDD = 480V, ID = 34A, VGS = 10V)
- 13.5ns typical rise time (VDD = 300V, ID = 34A, RG = 4.7ohm, VGS = 10V)
- 1.6V maximum forward on voltage (ISD = 34A, VGS = 0)
- TO-220 package, operating junction temperature range from -55 to 150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
34A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.088ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
MDmesh M2
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0023
Product traceability