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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$4.744 |
| 10+ | US$4.409 |
| 100+ | US$2.640 |
| 500+ | US$2.251 |
Price for:Each
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Multiple: 1
US$4.74 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB21N65EF-GE3
Order Code3929216
Product RangeE Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id21A
Drain Source On State Resistance0.15ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation208W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE Series
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
208W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.15ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
E Series
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001
Product traceability