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SIR426DP-T1-GE3
Power MOSFET, N Channel, 40 V, 30 A, 0.0105 ohm, SOIC, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | US$1.367 |
| 10+ | US$0.921 |
| 100+ | US$0.718 |
| 500+ | US$0.586 |
| 1000+ | US$0.523 |
| 5000+ | US$0.461 |
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Minimum: 1
Multiple: 1
US$1.37 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR426DP-T1-GE3
Order Code1794778
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id30A
Drain Source On State Resistance0.0105ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation41.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
41.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0105ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability