Reduced PricesOffersContact UsHelpTrack Orders
Register
0
0 ItemsUS$0.00
ex VAT
ex VAT

FETs:

20,211 Products Found
Dual MOSFETs
Dual MOSFETs (1,950)
JFETs
JFETs (227)
MOSFET Modules
MOSFET Modules (117)
Miscellaneous MOSFETs
Miscellaneous MOSFETs (6)
RF FETs
RF FETs (234)
Single MOSFETs
Single MOSFETs (17,677)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

ON Semi EliteSiC SiC MOSFET Half-Bridge & Full-Bridge Power Modules (P-Channel, 1.2 kV)
ONSEMI
ON Semi EliteSiC SiC MOSFET Half-Bridge & Full-Bridge Power Modules (P-Channel, 1.2 kV)
ONSEMI
High-Performance 1.2 kV Infineon TRENCHSTOP™ IGBT Power Devices
INFINEON
High-Performance 1.2 kV Infineon TRENCHSTOP™ IGBT Power Devices
INFINEON
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
M3S SiC Series
ONSEMI
M3S SiC Series
ONSEMI
CoolSiC™ Trench MOSFET
INFINEON
CoolSiC™ Trench MOSFET
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
Buyer Survey 2026

Buyer Survey 2026

Share your voice and help shape what’s next. Get a chance to win tech prizes

*Terms and conditions apply
NEXPERIA

NSF080120L3A0Q is a High-Efficiency 1200 V SiC MOSFET for Demanding Power Applications

NSF080120L3A0Q is a High-Efficiency 1200 V SiC MOSFET for Demanding Power Applications
smart-home

Smart Home: The intelligence inside every room

Smarter comfort, stronger security and seamless control

Norton Secured
BSI 9001
Visa
Mastercard
Trade Account